Factory Lead Time  

4 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-251-3 Stub Leads, IPak

Number of Pins  

3

Weight  

539mg

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

4.4A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

50W Tc

Turn Off Delay Time  

7 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

UniFET™

Published  

2013

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

ACTIVE (Last Updated: 14 hours ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin (Sn)

HTS Code  

8541.29.00.95

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Turn On Delay Time  

10 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.1 Ω @ 2.2A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

250pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

6nC @ 10V

Rise Time  

60ns

Drain to Source Voltage (Vdss)  

250V

Vgs (Max)  

±30V

Fall Time (Typ)  

34 ns

Continuous Drain Current (ID)  

4.4A

JEDEC-95 Code  

TO-251AA

Gate to Source Voltage (Vgs)  

30V

Pulsed Drain Current-Max (IDM)  

18A

DS Breakdown Voltage-Min  

250V

Avalanche Energy Rating (Eas)  

12 mJ

Height  

7.57mm

Length  

6.8mm

Width  

2.5mm

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant